Nanostructure Growth on Surfaces

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Experimental Techniques

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   Preparing Graphene

   Atomic Resolution Graphene

   Dy on G: HCP vs FCC


   Uniform Height Island

   QSE-driven Growth

   Nucleation Controlled by Height

   Moat Island

   Wetting Layer Diffusion

   In/Si(111) Crystallographic    Transition

   Island Height with SPALEED

   7-Layer "Electron Fringes"

Publications

Highlights

Growth of epitaxial graphene single layers on stepped 6H-SiC(0001) surfaces

PreparingG

Large domains of single or double layer Graphene are produced on 6H-SiC(0001) because Si desorption is better controlled by changing the annealing rate to reach the graphitization temperature, ~1300 C. Because the retraction step speed is not uniform, the carbon that remains forms a second layer of Graphene, and a single-layer of Graphene on the rest of the terraces. The bi-layer Graphene domains appear as "fingers" extending from triple-step edges.